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Sputtering Target

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Sputtering target,rare earth material,evaporation or thin film coating material from TYR

Alloy Sputtering Targets  Antimonide Sputtering Targets Boride Sputtering Targets
Carbide Sputtering Targets Fluoride Sputtering Targets Metal Sputtering Targets
Nitride sputtering targets  Noble Metal and alloy Sputtering Targets Oxide Sputtering Targets
Silicide Sputtering Targets

Arsenide Sputtering Targets 

Sulfide Targets
Telluride Sputtering Targets Selenide Sputtering Targets

Sputtering target,rare earth material,evaporation or thin film coating material from TYR

TYR offers a wide variety of sputtering targets materials suitable for vacuum deposition processes. Specializing in coarse and Discs, Circular, Rectangular Plate, Foil, Rings, S-Gun, Delta, Rotatable, step plate, discs e.t.c,. we can provide materials in almost all kinds of element material and a range of purities.

The Sputtering Targets are included high pure metal sputtering targets, Alloy sputtering targets, Noble metal sputtering targets, Noble alloy sputtering targets, Ceramic Sputtering targets (Oxide, Boride,  Carbide, Fluoride, Nitride, Sulfide, Selenide Ceramic, Silicide, Telluride)

For the size, some material are Max.1500mm Length and 406.4mm diameter are available.

Sputtering Process Applications : Film deposition, Etching, For analysis, In space

Magnetic Data Storage,Electronics / Semiconductor,Displays,Glass, Coatings,Photovoltaics,Solar Thermal,Wear Resistance.

Sputtering process is used in a variety of applications such as flat panel displays, optical discs, automotive and architectural glass, web coating, hard coatings, optical communications, solar cells, semiconductors, magnetic data storage devices, electron microscopy, and decorative applications.

Sputtering process can be used for depositing thin films from a wide range of materials on to different substrates. Although process parameters make sputtering a complex process, they allow a greater degree of control over the film’s growth and structure.

What is Sputtering

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles.[1] It only happens when the kinetic energy of the incoming particles is much higher than conventional thermal energies (≫ 1 eV). This process can lead, during prolonged ion or plasma bombardment of a material, to significant erosion of materials, and can thus be harmful. On the other hand, it is commonly utilized for thin-film deposition, etching and analytical techniques

How many kinds of sputtering method have ?

Sputtering Method: Magnetron sputtering, DC (direct current) sputtering, Radio Frequency (RF) sputteringPlasma sputtering, Reactive sputtering

Physics of sputtering,Electronic sputtering, Potential sputtering, Etching and chemical sputtering

Radio frequency (RF) sputtering is a technique that is used to create thin films, such as those found in the computer and semiconductor industry

DC magnetron sputtering is one of several types of sputtering, which is a method of physical vapor deposition of thin films of one material onto another material

Magnetron sputtering is a type of physical vapor deposition, a process in which a target material is vaporized and deposited on a substrate to create a thin film

Plasma sputtering is a technique used to create thin films of various substances. During the plasma sputtering process, a target material, in the form of a gas, is released into a vacuum chamber and exposed to a high intensity magnetic field.

Reactive sputtering for compound thin films: The sputtering process is often used to deposit metal thin films.  To make sputtered metal thin films we just run the sputtering process in an inert gas (usually Argon).  To make a compound thin film (such as SiO2, AlN, TiC) by reactive sputtering we add the appropriate reactive gas to the sputtering process.

Physics of sputtering:  Physical sputtering is driven by momentum exchange between the ions and atoms in the materials, due to collisions. A different mechanism of physical sputtering is heat spike sputtering. This may occur when the solid is dense enough, and then the incoming ion heavy enough, that the collisions occur very close to each other. Heat spike sputtering is most important for heavy ions (say Xe or Au or cluster ions) with energies in the keV–MeV range bombarding dense but soft metals with a low melting point (Ag, Au, Pb, etc.), Physical sputtering has a well-defined minimum energy threshold equal to or larger than the ion energy at which the maximum energy transfer of the ion to a sample atom equals the binding energy of a surface atom. This threshold typically is somewhere in the range 10–100 eV. Preferential sputtering can occur at the start when a multicomponent solid target is bombarded and there is no solid state diffusion. If the energy transfer is more efficient to one of the target components, and/or it is less strongly bound to the solid, it will sputter more efficiently than the other

Electronic sputtering: The term electronic sputtering can mean either sputtering induced by energetic electrons (for example in a transmission electron microscope), or sputtering due to very high-energy or highly charged heavy ions that lose energy to the solid mostly by electronic stopping power, where the electronic excitations cause sputtering. Electronic sputtering produces high sputtering yields from insulators, as the electronic excitations that cause sputtering are not immediately quenched, as they would be in a conductor.

Potential sputtering: In the case of multiply charged projectile ions a particular form of electronic sputtering can take place that has been termed potential sputtering.This sputtering process is characterized by a strong dependence of the observed sputtering yields on the charge state of the impinging ion and can already take place at ion impact energies well below the physical sputtering threshold.

Etching and chemical sputtering: Removing atoms by sputtering with an inert gas is called "ion milling" or "ion etching".Sputtering can also play a role in reactive ion etching (RIE), a plasma process carried out with chemically active ions and radicals, for which the sputtering yield may be enhanced significantly compared to pure physical sputtering, Sputtering observed to occur below the threshold energy of physical sputtering is also often called chemical sputtering.

There are many different ways to deposit materials such as metals, ceramics, and plastics onto a surface (substrate) and to form a thin film. Among these is a process called “SPUTTERING” that has become one of the most common ways to fabricate thin films. Sputtering is a physical vapor deposition (PVD) process used for depositing materials onto a substrate, by ejecting atoms from such materials and condensing the ejected atoms onto a substrate in a high vacuum environment.

What is Sputtering Targets ?

A sputtering target is a material that is used to create thin films in a technique known as sputter deposition, thin film deposition. During this process the sputtering target material, which begins as a solid, is broken up by gaseous ions into tiny particles that form a spray and coat another material, which is known as the substrate. Sputter deposition is commonly involved in the creation of semiconductors and computer chips. In order to obtain the required characteristics in a sputter deposited thin film, the production process utilized to build the sputtering target can be of significant importance. Regardless of the fact that the target material has an element, mixture of elements, compound, or alloys are available that create hardened thin coatings for various tools. the process undertaken to create that defined material, which is ideal for sputtering thin films of uniform quality, is equally important as the deposition run parameters perfected by scientists and engineers dealing in thin film processes.

Depending on the nature of the thin film being created, sputtering targets can very greatly in size and shape. The smallest targets can be less than one inch (25.4mm) in diameter, while the largest rectangular targets reach well over 1500mm in length. Some sputtering equipment will require a larger sputtering target and in these cases, manufacturers will create segmented targets that are connected by special joints.

The designs of sputtering systems, the machines that conduct the thin film deposition process, have become much more varied and specific. Accordingly, target shape and structure has begun to widen in variety as well. The shape of a sputtering target is usually either rectangular or circular, but our TYR ( can create additional special shapes upon request. Certain sputtering systems require a rotating target to provide a more precise, even thin film. These targets are shaped like long cylinders, and offer additional benefits including faster deposition speeds, less heat damage, and increased surface area, which leads to greater overall utility.

Thin films that require pure metals for the target material will usually have more structural integrity if the target is as pure as possible, TYR ( can supply high pure metal targets purity as to 99.9999% for some material. The ions used to bombard the sputtering target are also important for producing a decent quality thin film. Generally, argon is the primary gas chosen to ionize and initiate the sputtering process, but for targets that have lighter or heavier molecules a different noble gas, such as neon for lighter molecules, or krypton for heavier molecules, is more effective. It is important for the atomic weight of the gas ions to be similar to that of the sputtering target molecules to optimize the transfer of energy and momentum, thereby optimizing the evenness of the thin film.

Sputtering        Thin Film Sputtering     Ceramic Coating  PVD Coating  Target            Ceramic Coating        Evaporation Coating  

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