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Made In China Cosi2 Cobalt Silicide Sputtering Target

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  • china silicide sputtering target - china mo5si3, ga2o3

    China Silicide Sputtering Target - China Mo5si3, Ga2o3

    China Silicide Sputtering Target, Find details about China Mo5si3, Ga2o3 from Silicide Sputtering Target - Cathay Advanced Materials Limited

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  • molybdenum disulphide (mos2) target - zzsputteringtarget

    Molybdenum Disulphide (MoS2) Target - zzsputteringtarget

    China Molybdenum Disulphide (MoS2) Target, Find details about China Zns, Molybdenum Disulphide (MoS2) target from Molybdenum Disulphide (MoS2) Target - Cathay Advanced Materials Limited

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  • china iron (fe) sputtering target - zzsputteringtarget

    China Iron (Fe) Sputtering Target - zzsputteringtarget

    China Iron (Fe) Sputtering Target, Find details about China Iron, Fe from Iron (Fe) On zzsputteringtarget Cobalt Co Metal;

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  • sputtering targets customization experters - crm

    Sputtering targets customization experters - CRM

    Sputtering Targets. Metal Sputtering Target - Alloy and also successfully made many trial orders and Silicide Ceramic Sputtering Targets

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  • sputtering targets(metal target, alloy target,ceramic target)

    sputtering targets(metal target, alloy target,ceramic target)

    sputtering targets(metal target, alloy target,ceramic target), (metal target, alloy target,ceramic ,Chromium Silicide (CrSi2),Cobalt Silicide(CoSi2), Hafnium

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  • sputtering targets - china rare metal material co.,limited

    sputtering targets - China Rare Metal Material Co.,Limited

    sputtering targets including Chromium alloy sputtering Target, Silicide (Cr3Si),Chromium Silicide (CrSi2),Cobalt Silicide(CoSi2), Hafnium

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  • ytterbium yb, yb2o3 target - china - manufacturer

    Ytterbium Yb, Yb2O3 target - China - Manufacturer

    Silver, Ag, Iridium, Ir, Ruthenium, Ru, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, Silicon, Si, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, Magnesium, Mg.

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  • fluorine doped tin oxide fto target - china - manufacturer

    Fluorine doped Tin Oxide FTO target - China - Manufacturer

    Inorganic films typically are made up of a layer of transparent fluorine doped tin oxide (FTO), and doped Oxide sputtering target: CeO2, Nd2O3

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  • cobalt sputtering target and sputter deposition of co thin films for

    Cobalt sputtering target and sputter deposition of Co thin films for

    The target with the highest PTF% demonstrated the best performance and film uniformity. Rapid thermal processing (RTP) was carried out to form cobalt silicides at temperatures between 300 and 850 °C in Ar atmosphere for various times. The sheet resistance of the Co and cobalt silicide films produced was monitored by a

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  • cobalt silicide | american elements ®

    Cobalt Silicide | AMERICAN ELEMENTS ®

    Cobalt Silicide CoSi2 bulk & research qty manufacturer. Properties, SDS, Applications, Price. Free samples program. Term contracts & credit cards/PayPal accepted.

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  • effects of alloying elements on cobalt silicide formation

    Effects of Alloying Elements on Cobalt Silicide Formation

    For pure cobalt silicide, we detect the formation of all stable silicide phases ( Co2Si, CoSi and CoSi2) as well as the abnor- mal grain growth in the Co film observed at lower tem- peratures and the binary Co alloy layer, 8 nm thick, was co-sputtered from two elemental surements of roughness are made from laser light of.

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  • us8563424b2 - process for forming cobalt and cobalt silicide

    US8563424B2 - Process for forming cobalt and cobalt silicide

    The target 142 comprises the material to be deposited on the substrate 154 surface during sputtering, and may include cobalt, cobalt silicide, ruthenium, rhodium, titanium, tantalum, tungsten, molybdenum, platinum, nickel, iron, niobium, palladium, alloys thereof, or combinations thereof, which are used in forming metal

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  • effects of cosi2 p polysilicon gates fabricated by bf - citeseerx

    Effects of CoSi2 p Polysilicon Gates Fabricated by BF - CiteSeerX

    films and subsequent annealing has been studied as a function of cobalt silicide thickness and implantation energy. Significant degradation of gate oxide integrity and flatband voltage shifts were found with increasing cobalt silicide thickness and annealing temperature. It is shown that although thinner cobalt suicide can

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  • sputtering targets - china rare metal material co., ltd

    Sputtering Targets - China Rare Metal Material Co., Ltd

    Sputtering targets,Evaporation materials,high purity metal, high purity materials, rare earth materials, nanomaterials,crystals, compound semiconductor,distilled We also have an experienced research team who have developed many new and special sputtering targets, and also successfully made many trial orders and

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  • cobalt silicide formation through a diffusion

    COBALT SILICIDE FORMATION THROUGH A DIFFUSION

    shown in thin film silicides, produced by the reaction of alloys of cobalt with a silicon target shutter with the target at the top, and a closed target shutters. .. Co2Si CoSi CoSi2. Similar to other metal silicides, these cobalt silicides have unique crystal structures. Table. zzsputteringtarget summarises the phase sequences, crystal

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  • improvement of thermal stability of nickel silicide using co

    Improvement of Thermal Stability of Nickel Silicide Using Co

    silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for consumption of CoSi2 have become serious problems in the fabrication of a ultra-shallow source/drain p-type Si substrate by co-sputtering of Ni and Ti targets using a radio frequency magnetron sputter system,.

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  • interlayer mediated epitaxy of cobalt silicide on silicon - gelest

    Interlayer Mediated Epitaxy of Cobalt Silicide on Silicon - Gelest

    This paper reports the development of a methodology for the growth of epitaxial CoSi2 that uses Co films deposited by low temperature (390°C) chemical need for new materials and process zzsputteringtarget Cobalt silicide (CoSi2) meets these . minute (sccm) argon sputtering gas, and 100 mm target to substrate. TiN.

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  • cerametek materials: semiconductor compounds, (5n-6n), rare

    Cerametek Materials: semiconductor compounds, (5N-6N), Rare

    Vapor deposition and Sputtering materials: 2N-4N, Metal oxide, Metal, Rare earth metals, Compounds of semiconductor and alloy in powder, piece; and disc or zzsputteringtarget Metal and alloy target: 3N-6N, Aluminum (Al), Antimony (Sb), Arsenic (As), Barium (Ba), Bismuth (Bi), Boron (B), Chromium (Cr), Copper (Cu), Cobalt (Co),

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